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  >   Products  >   FIELD EFFECT TRANSISTOR
SFX7N70
Brief
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Details
 
Features Application
  • VDS(V)=700V, ID=7A                                                                                   
  • RDS(ON)
TYP:1.3Ω@VGS=10V   ID=3.5A
MAX:1.5Ω
  • Power faction correction (PFC)                                                                                      
  • Switched mode power supplies (SMPS)
  • Uninterruptible power supply (UPS)
  • LED lighting power